Intermolecular interactions of chlorpheniramine with 1-methanol at 303K, 308K and 313K using Time Domain Reflectometry
Intermolecular interactions of chlorpheniramine with 1-methanol have been reported at various concentrations in the frequency range 10 MHz to 10 GHz at 303K,308K and 313K using Time Domain Reflectometry (TDR). Excess inverse relaxation time and dielectric relaxationtime were computed by Higasi’s Method and interoperated in terms of the molecular interaction of the liquid mixture. The relaxation time and dielectric constant were decreased with increase in concentration of chlorpheniramine. Cole-Cole method was used to determine the non-linearity of the interactions with ideal values. Deviations in such parameters at all the temperatures implies that the existence of solute-solvent interaction due to rotation of dipoles present in the selected liquid system. Hence the experimental observations suggested hetero interaction which may be due to hydrogen bonding of the –OH group of alcohol with N-H of the chlorpheniramine. The intermolecular interaction was obtained in the order of 303K >308K >313K.
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Mathematical analysis of intermolecular interaction studies between brompheniramine and 1-hexanol at various temperatures using ultrasonic velocity.
Viscosity, density , and ultrasonic velocity , of brompheniramine with 1-hexanol were determined at 303K , 308K and 313K.From the experimental observations, adiabatic compressibility , viscous relaxation time , free volume (Vf), free length (Lf), and Gibbs free energy were calculated. Deviations of that parameters with ideal values were analyzed using mathematical relations and fitted with Redlich Kister polynomial equations. Standard deviations of the determined values of various parameters were calculated. From the observations, temperature takes a vital role and dissociation take place in the increasing temperature.
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Photon-Assisted Transport Phenomenon in Graphene Nanoribbons: A Quasi-Classical Approach
A semi-classical Boltzmann transport model is developed to observe photon-assisted dynamics of induced carriers in the graphene nanoribbons. When the nanoribbons are subject to a multi-frequency Alternating Current (ac) field and superimposed on by static Direct Current (dc) field, an unusual non-linear response of the system shows up at a rather strong drive force. The non-linearity in the photo-current allows for up-conversion necessary for low-frequency oscillators. Regions of positive differential conductivity are observed paving way for graphene to be operated as a small signal amplifier for Terahertz (THz) applications. The fractional photon-assisted phenomenon is also observed when the stark factor r > 1 and the ratio of the n-th harmonic to stark factor takes on half-integer values.
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Quantization of Friction for NANO Isolated Systems
A wide variety of materials have mechanical friction. This friction plays an important role in determine the mechanical properties and the electrical properties of the matter. The most popular physical theory that is used to describe the physical properties of matter is quantum mechanics. Recently quantum laws found to be incapable of describing the behavior of some new materials like super conductors and Nano materials. This may be attributed to the fact that quantum laws have no terms sensitive to friction. This work aims to derive Schrodinger quantum equation having frictional term. This equation is used to solve the problem of particle in a box. The solution shows quantized frictional energy.
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Effect of Gamma Ray on the Optical Properties of Tio2 and ZnO Thin Films
In this work, the zinc oxide (ZnO) and dioxide titanium (TiO?) thin film were prepared by using the method of spry pyrolsis chemical with different thickness on glass substrate at temperature of 60º C. Thees different thickness of the deposited films were measured by using mass approximations weighting different method. The thickness for Tio? films are (3.1, 0.24, 0.12)?m and for ZnO films (3.5, 4)?m. The samples coated have been irradiated by gamma ray to 21.5 kGy dose from Co-60 source. The optical properties such as the absorbance spectrum, transmittance, reflectance, and optical constant (absorption coefficient, extinction coefficient, refraction index and coefficient finesse with different thickness as function wave length of films but energy gap and urbach energy as function photon energy) were studied before and after irradiation dose. From experimental work show that the color of these films were changed after irradiated, at the result all optical properties spectra thin films changed with different thicknesses. The absorption, reflectance absorption coefficient, extinction coefficient, refractive index, coefficient finesse are increases after irradiation but the transmission, urbach energy and energy gap decreases after dose for all thicness of TiO2 films. Whereas absorption and absorption coefficient, extinction coefficient increases after irradiation for thiknsss of ZnO thin films but reflectance, transmission, refractive index, coefficient finesse urbach energy and energy gap decreases after dose for Zno. These effect of optical properties may be due to change of structure properties for Tio2, Zno thin films after irradiated.
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Modern Picture of the World and the Creator
The present article discuses the problems of new Unitary Quantum Theory in its applications to the different aspects of the reality. There are spectacular examples of such applications. The Modern science cannot explain origin of life's.
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Study on Variation of Ferroelectric Parameters of Dielectric Materials ZrTiO4 +Al with Quality Factor and Resonant Frequency
The variation of dielectric constant with temperature of mixed compound of Zirconium titanate with aluminium and other dielectric parameters have been measured between the temperatures 35°C to 300°C using the capacitance bridge model ZENITH-M92A and Q meter at the frequency of 2000 Hz in which percentage of Al is from 20 to 35. The solid solution of mixed compound of Zirconium titanate with aluminium has excellent dielectric property such as dielectric constant of nearly ? = 7000, quality factor Qf = 25000GHz and temperature coefficient of resonant frequency ?f = 75 ppm/ºC which is very much useful in ceramics engineering and communication system. In the measurement, it have been observed that the compound has lower value of dielectric constant (? = 1580) below 36ºC, which rises upto a value of 5500 at the moderate temperature of 76ºC. After this temperature the dielectric constant of compound decreases upto the value of nearly 1500 at the temperature of 88ºC and a high peak is obtained at the temperature of 150°C (? = 10000) in the heating cycle curve with some fluctuations. When the variation of dielectric constant was studied in cooling cycle the peak was observed at 140ºC(? = 10000), above and below this temperature, dielectric constant decreases with some intermediate fluctuations. The cooling cycle curve does not follow heating curve because of the temperature relaxation of the compound. Annealing Zirconium titanate with aluminium increases the order parameter and improves the dielectric quality factor. Many investigation showed as the mixed compound as a useful temperature-stable dielectric ceramic device and by increasing aluminium content in the mother compound, its quality factor also increases with a little effect on dielectric constant. One of the advantages of ZrTiO4 with aluminium is that by varying the aluminium content, we can control temperature coefficient of resonant frequency ?f without drastically affecting the other properties.
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Determination of Energy Gap of a Semiconductor Using Simple Electric Circuit
In this work and experiment was carried out in order to find the value of energy gap of silicone, zener and light emitting diode (LED) diode using simple electric circuit.
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The influence of deposition temperature on the structure and optical band gap of zinc sulphide thin films deposited from acidic chemical baths
Nanocrystalline zinc sulphide (ZnS) thin films have been successfully deposited on silica glass substrates from acidic chemical baths containing tartaric acid and hydrazine as complexing agents, thioacetamide as a sulphur source and zinc acetate as the source of zinc ions. The influence of temperature on the structural-, optical-, morphological properties and elemental composition of the films were investigated by a variety of techniques. Powder x-ray diffraction patterns of the films exhibited the cubic structure. The deposition temperature had a significant influence on the lattice parameter and crystallite size. Scanning electron microscope and energy dispersive x-ray investigations have shown an improvement in morphology and stoichiometry of the films with increasing deposition temperature. The band gap of the thin films obtained by optical absorption spectroscopy showed a decrease from 3.88 eV to 3.75 eV as the deposition temperature increased. Transmittance of the films increased with decreasing deposition temperature.
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Pressure induced nonlinear optical properties in a strained Zn0.1Mg0.9Se / Zn0.8Mg0.2Se / Zn0.1Mg0.9Se quantum well
Pressure induced exciton binding energy, optical transition energy, second order optical rectification coefficient and the third order harmonic generation of third order susceptibility are computed in Zn0.1Mg0.9Se / Zn0.8Mg0.2Se / Zn0.1Mg0.9Se quantum well. The effects of geometrical confinement and the contribution from the induced strain are included in the Hamiltonian. The effects of internal electric field comprising spontaneous and piezoelectric polarization are considered throughout the calculations. Exciton binding energies, in the presence of hydrostatic pressure, are computed using single band effective mass approximation. Calculations are done employing the variational method and the density matrix method. The second order optical rectification coefficient and the third order susceptibility with the incident photon energy are calculated in the presence of hydrostatic pressure. It is observed that the effect of pressure has influence on the nonlinear optical properties in the Mg based ZnSe quantum well.
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